Publications

Journal Articles

18.

N E Lourenco, <b>A. Ildefonso</b>, G N Tzintzarov, Z E Fleetwood, K Motoki, P Paki, M Kaynak, J D Cressler

Single-Event Upset Mitigation in a Complementary SiGe HBT BiCMOS Technology Journal Article

IEEE Trans. Nucl. Sci., 65 (1), pp. 231-238, 2018, ISSN: 0018-9499.

Links

17.

<b>A. Ildefonso</b>, C T Coen, Z E Fleetwood, G N Tzintzarov, M T Wachter, A Khachatrian, D Mcmorrow, J H Warner, P Paki, J D Cressler

Utilizing SiGe HBT Power Detectors for Sensing Single-Event Transients in RF Circuits Journal Article

IEEE Trans. Nucl. Sci., 65 (1), pp. 239-248, 2018, ISSN: 0018-9499.

Links

16.

Z E Fleetwood, <b>A. Ildefonso</b>, G N Tzintzarov, B Wier, U Raghunathan, M K Cho, I Song, M T Wachter, D Nergui, A Khachatrian, J H Warner, P McMarr, H Hughes, E Zhang, D McMorrow, P Paki, A Joseph, V Jain, J D Cressler

SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients Journal Article

IEEE Trans. Nucl. Sci., 65 (1), pp. 399-406, 2018, ISSN: 0018-9499.

Links

15.

J M Hales, A Khachatrian, S Buchner, N J H Roche, J Warner, Z E Fleetwood, <b>A. Ildefonso</b>, J D Cressler, V Ferlet-Cavrois, D McMorrow

Experimental Validation of an Equivalent LET Approach for Correlating Heavy-Ion and Laser-Induced Charge Deposition Journal Article

IEEE Transactions on Nuclear Science, 65 (8), pp. 1724-1733, 2018, ISSN: 0018-9499.

Links

14.

<b>A. Ildefonso</b>, I Song, G N Tzintzarov, Z E Fleetwood, N E Lourenco, M T Wachter, J D Cressler

Modeling Single-Event Transient Propagation in a SiGe BiCMOS Direct-Conversion Receiver Journal Article

IEEE Trans. Nucl. Sci., 64 (8), pp. 2079-2088, 2017, ISSN: 0018-9499.

Links

13.

I Song, M K Cho, M A Oakley, <b>A. Ildefonso</b>, I Ju, S P Buchner, D McMorrow, P Paki, J D Cressler

On the Application of Inverse-Mode SiGe HBTs in RF Receivers for the Mitigation of Single-Event Transients Journal Article

IEEE Trans. Nucl. Sci., 64 (5), pp. 1142-1150, 2017, ISSN: 0018-9499.

Links

12.

<b>A. Ildefonso</b>, N E Lourenco, Z E Fleetwood, M T Wachter, G N Tzintzarov, A S Cardoso, N J H Roche, A Khachatrian, D McMorrow, S P Buchner, J H Warner, P Paki, M Kaynak, B Tillack, J D Cressler

Single-Event Transient Response of Comparator Pre-Amplifiers in a Complementary SiGe Technology Journal Article

IEEE Trans. Nucl. Sci., 64 (1), pp. 89-96, 2017, ISSN: 0018-9499.

Links

11.

Z E Fleetwood, N E Lourenco, A Ildefonso, J H Warner, M T Wachter, J M Hales, G N Tzintzarov, N J H Roche, A Khachatrian, S P Buchner, D McMorrow, P Paki, J D Cressler

Using TCAD Modeling to Compare Heavy-Ion and Laser-Induced Single Event Transients in SiGe HBTs Journal Article

IEEE Trans. Nucl. Sci., 64 (1), pp. 398-405, 2017, ISSN: 0018-9499.

Links

10.

N E Lourenco, Z E Fleetwood, <b>A. Ildefonso</b>, M T Wachter, N J H Roche, A Khachatrian, D McMorrow, S P Buchner, J H Warner, H Itsuji, D Kobayashi, K Hirose, P Paki, A Raman, J D Cressler

The Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs Journal Article

IEEE Trans. Nucl. Sci., 64 (1), pp. 406-414, 2017, ISSN: 0018-9499.

Links

9.

A Omprakash, Z Fleetwood, U Raghunathan, <b>A. Ildefonso</b>, A Cardoso, N Lourenco, J Babcock, R Mukhopadhyay, E X Zhang, D Fleetwood, J Cressler

Total Ionizing Dose Effects on a High-Voltage (>30V) Complementary SiGe on SOI Technology Journal Article

IEEE Trans. Nucl. Sci., 64 (1), pp. 277-284, 2017, ISSN: 0018-9499.

Links

7.

N E Lourenco, S Zeinolabedinzadeh, <b>A. Ildefonso</b>, Z E Fleetwood, C T Coen, I Song, S Jung, F Inanlou, N J H Roche, A Khachatrian, D McMorrow, S P Buchner, J H Warner, P Paki, J D Cressler

An Investigation of Single-Event Effect Modeling Techniques for a SiGe RF Low-Noise Amplifier Journal Article

IEEE Trans. Nucl. Sci., 63 (1), pp. 273-280, 2016, ISSN: 0018-9499.

Links

6.

C T Coen, A C Ulusoy, P Song, <b>A. Ildefonso</b>, M Kaynak, B Tillack, J D Cressler

Design and On-Wafer Characterization of G-Band SiGe HBT Low-Noise Amplifiers Journal Article

IEEE Trans. Microw. Theory Techn., 64 (11), pp. 3631-3642, 2016, ISSN: 0018-9480.

Links

3.

A S Cardoso, A P Omprakash, P S Chakraborty, N Karaulac., D M Fleischhauer, <b>A. Ildefonso</b>, S Zeinolabedinzadeh, M A Oakley, T G Bantu, N E Lourenco, J D Cressler

On the Cryogenic RF Linearity of SiGe HBTs in a Fourth-Generation 90-nm SiGe BiCMOS Technology Journal Article

IEEE Trans. Electron Devices, 62 (4), pp. 1127-1135, 2015.

Links

2.

Z E Fleetwood, N E Lourenco, <b>A. Ildefonso</b>, T D England, I Song, R L Schmid, A S Cardoso, S Jung, N J -H Roche, A Khachatrian, S P Buchner, D McMorrow, J H Warner, P Paki, J D Cressler

An Investigation of the SET Response of Devices and Differential Pairs in a 32-nm SOI CMOS Technology Journal Article

IEEE Trans. Nucl. Sci., 62 (6), pp. 2643-2649, 2015, ISSN: 0018-9499.

Links

Inproceedings

8.C T Coen, <b>A. Ildefonso</b>, Z E Fleetwood, J D Cressler: A 19–34 GHz SiGe HBT Square-Law Detector with Ultra Low 1/f Noise for Atmospheric Radiometers. pp. 163-166, Proc. European Microwave Integrated Circuits Conference, 2017. (Type: Inproceedings | )
5.M T Wachter, <b>A. Ildefonso</b>, Z E Fleetwood, N E Lourenco, G Tzintzarov, D McMorrow, N J -H Roche, A Khachatrian, P McMarr, H Hughes, J H Warner, P Paki, J D Cressler: The Effects of Total Ionizing Dose on the Transient Response of SiGe BiCMOS Technologies. Proc. Radiation Effects on Components and Systems Conference (RADECS), 2016. (Type: Inproceedings | )
4.<b>A. Ildefonso</b>, I Song, Z E Fleetwood, N E Lourenco, M T Wachter, J D Cressler: Modeling Single-Event Transient Propagation in a SiGe BiCMOS Direct-Conversion Receiver. Proc. Radiation Effects on Components and Systems Conference (RADECS), 2016. (Type: Inproceedings | )
1.A Omprakash, P S Chakraborty, H Ying, A S Cardoso, <b>A. Ildefonso</b>, J D Cressler: On the potential of using SiGe HBTs on SOI to support emerging applications up to 300 C. Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 2015 IEEE, pp. 27-30, 2015. (Type: Inproceedings | Links)