Publications

For a complete list of publications, presentations and lectures, please see my CV. The most updated list of publications can also be found on my Google Scholar profile.

Journal Publications

17.P S Goley, G N Tzintzarov, S Zeinolabedinzadeh, A Ildefonso, K Motoki, R Jiang, E X Zhang, D M Fleetwood, L Zimmermann, M Kaynak, S Lischke, C Mai, J D Cressler: Total Ionizing Dose Effects in 70-GHz Bandwidth Photodiodes in a SiGe Integrated Photonics Platform. IEEE Trans. Nucl. Sci., 66 (1), pp. 125-133, 2019, ISSN: 0018-9499. (Type: Journal Article | | Links: )
16.A Ildefonso, Z E Fleetwood, G N Tzintzarov, J M Hales, D Nergui, M Frounchi, A Khachatrian, S P Buchner, D Mcmorrow, J H Warner, J Harms, A Erickson, K Voss, V Ferlet-Cavrois, J D Cressler: Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs. IEEE Trans. Nucl. Sci., 66 (1), pp. 359-367, 2019, ISSN: 0018-9499, (Received Outstanding Student Paper Award and Outstanding Conference Paper Award at the 2018 Nuclear and Space Radiation Effects Conference). (Type: Journal Article | | Links: )
15.A P Omprakash, A Ildefonso, Z E Fleetwood, G N Tzintzarov, A S Cardoso, J A Babcock, R Mukhopadhyay, A Khachatrian, J H Warner, D McMorrow, S P Buchner, J D Cressler: The Effects of Temperature on the Single-Event Transient Response of a High-Voltage ( $>$ 30 V) Complementary SiGe-on-SOI Technology. IEEE Trans. Nucl. Sci., 66 (1), pp. 389-396, 2019, ISSN: 0018-9499. (Type: Journal Article | | Links: )
14.J M Hales, A Khachatrian, S Buchner, N J -H Roche, J Warner, Z E Fleetwood, A Ildefonso, J D Cressler, V Ferlet-Cavrois, D Mcmorrow: Experimental Validation of an Equivalent LET Approach for Correlating Heavy-Ion and Laser-Induced Charge Deposition. IEEE Transactions on Nuclear Science, 65 (8), pp. 1724-1733, 2018, ISSN: 0018-9499. (Type: Journal Article | | Links: )
13.N E Lourenco, A Ildefonso, G N Tzintzarov, Z E Fleetwood, K Motoki, P Paki, M Kaynak, J D Cressler: Single-Event Upset Mitigation in a Complementary SiGe HBT BiCMOS Technology. IEEE Trans. Nucl. Sci., 65 (1), pp. 231-238, 2018, ISSN: 0018-9499. (Type: Journal Article | | Links: )
12.A Ildefonso, C T Coen, Z E Fleetwood, G N Tzintzarov, M T Wachter, A Khachatrian, D Mcmorrow, J H Warner, P Paki, J D Cressler: Utilizing SiGe HBT Power Detectors for Sensing Single-Event Transients in RF Circuits. IEEE Trans. Nucl. Sci., 65 (1), pp. 239-248, 2018, ISSN: 0018-9499. (Type: Journal Article | | Links: )
11.Z E Fleetwood, A Ildefonso, G N Tzintzarov, B Wier, U Raghunathan, M K Cho, I Song, M T Wachter, D Nergui, A Khachatrian, J H Warner, P McMarr, H Hughes, E Zhang, D McMorrow, P Paki, A Joseph, V Jain, J D Cressler: SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients. IEEE Trans. Nucl. Sci., 65 (1), pp. 399-406, 2018, ISSN: 0018-9499. (Type: Journal Article | | Links: )
10.A Ildefonso, N E Lourenco, Z E Fleetwood, M T Wachter, G N Tzintzarov, A S Cardoso, N J -H Roche, A Khachatrian, D McMorrow, S P Buchner, J H Warner, P Paki, M Kaynak, B Tillack, J D Cressler: Single-Event Transient Response of Comparator Pre-Amplifiers in a Complementary SiGe Technology. IEEE Trans. Nucl. Sci., 64 (1), pp. 89-96, 2017, ISSN: 0018-9499, (Nominated for the Outstanding Student Paper Award at the 2016 Nuclear and Space Radiation Effects Conference). (Type: Journal Article | | Links: )
9.Z E Fleetwood, N E Lourenco, A Ildefonso, J H Warner, M T Wachter, J M Hales, G N Tzintzarov, N J -H Roche, A Khachatrian, S P Buchner, D McMorrow, P Paki, J D Cressler: Using TCAD Modeling to Compare Heavy-Ion and Laser-Induced Single Event Transients in SiGe HBTs. IEEE Trans. Nucl. Sci., 64 (1), pp. 398-405, 2017, ISSN: 0018-9499. (Type: Journal Article | | Links: )
8.N E Lourenco, Z E Fleetwood, A Ildefonso, M T Wachter, N J -H Roche, A Khachatrian, D McMorrow, S P Buchner, J H Warner, H Itsuji, D Kobayashi, K Hirose, P Paki, A Raman, J D Cressler: The Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs. IEEE Trans. Nucl. Sci., 64 (1), pp. 406-414, 2017, ISSN: 0018-9499, (Nominated for the Outstanding Student Paper Award at the 2016 Nuclear and Space Radiation Effects Conference). (Type: Journal Article | | Links: )
7.A Omprakash, Z Fleetwood, U Raghunathan, A Ildefonso, A Cardoso, N Lourenco, J Babcock, R Mukhopadhyay, E X Zhang, D Fleetwood, J Cressler: Total Ionizing Dose Effects on a High-Voltage (>30V) Complementary SiGe on SOI Technology. IEEE Trans. Nucl. Sci., 64 (1), pp. 277-284, 2017, ISSN: 0018-9499. (Type: Journal Article | | Links: )
6.A Ildefonso, I Song, G N Tzintzarov, Z E Fleetwood, N E Lourenco, M T Wachter, J D Cressler: Modeling Single-Event Transient Propagation in a SiGe BiCMOS Direct-Conversion Receiver. IEEE Trans. Nucl. Sci., 64 (8), pp. 2079-2088, 2017, ISSN: 0018-9499. (Type: Journal Article | | Links: )
5.I Song, M K Cho, M A Oakley, A Ildefonso, I Ju, S P Buchner, D McMorrow, P Paki, J D Cressler: On the Application of Inverse-Mode SiGe HBTs in RF Receivers for the Mitigation of Single-Event Transients. IEEE Trans. Nucl. Sci., 64 (5), pp. 1142-1150, 2017, ISSN: 0018-9499. (Type: Journal Article | | Links: )
4.N E Lourenco, S Zeinolabedinzadeh, A Ildefonso, Z E Fleetwood, C T Coen, I Song, S Jung, F Inanlou, N J -H Roche, A Khachatrian, D McMorrow, S P Buchner, J H Warner, P Paki, J D Cressler: An Investigation of Single-Event Effect Modeling Techniques for a SiGe RF Low-Noise Amplifier. IEEE Trans. Nucl. Sci., 63 (1), pp. 273-280, 2016, ISSN: 0018-9499. (Type: Journal Article | | Links: )
3.C T Coen, A C Ulusoy, P Song, A Ildefonso, M Kaynak, B Tillack, J D Cressler: Design and On-Wafer Characterization of $G$ -Band SiGe HBT Low-Noise Amplifiers. IEEE Trans. Microw. Theory Techn., 64 (11), pp. 3631-3642, 2016, ISSN: 0018-9480. (Type: Journal Article | | Links: )
2.A S Cardoso, A P Omprakash, P S Chakraborty, N Karaulac, D M Fleischhauer, A Ildefonso, S Zeinolabedinzadeh, M A Oakley, T G Bantu, N E Lourenco, J D Cressler: On the Cryogenic RF Linearity of SiGe HBTs in a Fourth-Generation 90-nm SiGe BiCMOS Technology. IEEE Trans. Electron Devices, 62 (4), pp. 1127-1135, 2015. (Type: Journal Article | )
1.Z E Fleetwood, N E Lourenco, A Ildefonso, T D England, I Song, R L Schmid, A S Cardoso, S Jung, N J -H Roche, A Khachatrian, S P Buchner, D McMorrow, J Warner, P Paki, J D Cressler: An Investigation of the SET Response of Devices and Differential Pairs in a 32-nm SOI CMOS Technology. IEEE Trans. Nucl. Sci., 62 (6), pp. 2643-2649, 2015, ISSN: 0018-9499. (Type: Journal Article | | Links: )

Conference Proceedings

6.A P Omprakash, A Ildefonso, G Tzintzarov, J Babcock, R Mukhopadhyay, J D Cressler: Using SiGe-on-SOI HBTs to Build 300$^circ$C Capable Analog Circuits. 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), pp. 206-209, 2018. (Type: Inproceedings | | Links: )
5.A Ildefonso, J D Cressler: Radiation Hardening Strategies for SiGe-Based RF Communications Circuits and Systems. Proc. 2018 Government Microcircuit Applications and Critical Technology (GOMACTech) Conference, 2018. (Type: Inproceedings | )
4.C T Coen, A Ildefonso, Z E Fleetwood, J D Cressler: A 19–34 GHz SiGe HBT Square-Law Detector with Ultra Low 1/f Noise for Atmospheric Radiometers. pp. 163-166, Proc. European Microwave Integrated Circuits Conference, 2017. (Type: Inproceedings | )
3.M T Wachter, A Ildefonso, Z E Fleetwood, N E Lourenco, G Tzintzarov, D McMorrow, N J -H Roche, A Khachatrian, P McMarr, H Hughes, J H Warner, P Paki, J D Cressler: The Effects of Total Ionizing Dose on the Transient Response of SiGe BiCMOS Technologies. 2016 Radiation Effects on Components and Systems (RADECS) Conference, 2016. (Type: Inproceedings | )
2.A Ildefonso, I Song, Z E Fleetwood, N E Lourenco, M T Wachter, J D Cressler: Modeling Single-Event Transient Propagation in a SiGe BiCMOS Direct-Conversion Receiver. Radiation Effects on Components and Systems (RADECS) Conference, 2016. (Type: Inproceedings | )
1.A P Omprakash, P S Chakraborty, H Ying, A S Cardoso, A Ildefonso, J D Cressler: On the potential of using SiGe HBTs on SOI to support emerging applications up to 300$^circ$C. Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 2015 IEEE, pp. 27-30, 2015. (Type: Inproceedings | | Links: )
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