Publications

For a complete list of publications, presentations and lectures, please see my CV. The most updated list of publications can also be found on my Google Scholar profile.

Journal Publications

  1. P. S. Goley, G. N. Tzintzarov, S. Zeinolabedinzadeh, A. Ildefonso, K. Motoki, R. Jiang, E. X. Zhang, D. M. Fleetwood, L. Zimmermann, M. Kaynak, S. Lischke, C. Mai, J. D. Cressler, "Total Ionizing Dose Effects in 70-GHz Bandwidth Photodiodes in a SiGe Integrated Photonics Platform," IEEE Trans. Nucl. Sci., vol. 66 no. 1, pp. 125-133, 2019.
  2. A. Ildefonso, Z. E. Fleetwood, G. N. Tzintzarov, J. M. Hales, D. Nergui, M. Frounchi, A. Khachatrian, S. P. Buchner, D. Mcmorrow, J. H. Warner, J. Harms, A. Erickson, K. Voss, V. Ferlet-Cavrois, J. D. Cressler, "Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs," IEEE Trans. Nucl. Sci., vol. 66 no. 1, pp. 359-367, 2019, (Received Outstanding Student Paper Award and Outstanding Conference Paper Award at the 2018 Nuclear and Space Radiation Effects Conference).
  3. A. P. Omprakash, A. Ildefonso, Z. E. Fleetwood, G. N. Tzintzarov, A. S. Cardoso, J. A. Babcock, R. Mukhopadhyay, A. Khachatrian, J. H. Warner, D. McMorrow, S. P. Buchner, J. D. Cressler, "The Effects of Temperature on the Single-Event Transient Response of a High-Voltage ( $>$ 30 V) Complementary SiGe-on-SOI Technology," IEEE Trans. Nucl. Sci., vol. 66 no. 1, pp. 389-396, 2019.
  4. J. M. Hales, A. Khachatrian, S. Buchner, N. J. -H. Roche, J. Warner, Z. E. Fleetwood, A. Ildefonso, J. D. Cressler, V. Ferlet-Cavrois, D. Mcmorrow, "Experimental Validation of an Equivalent LET Approach for Correlating Heavy-Ion and Laser-Induced Charge Deposition," IEEE Transactions on Nuclear Science, vol. 65 no. 8, pp. 1724-1733, 2018.
  5. N. E. Lourenco, A. Ildefonso, G. N. Tzintzarov, Z. E. Fleetwood, K. Motoki, P. Paki, M. Kaynak, J. D. Cressler, "Single-Event Upset Mitigation in a Complementary SiGe HBT BiCMOS Technology," IEEE Trans. Nucl. Sci., vol. 65 no. 1, pp. 231-238, 2018.
  6. A. Ildefonso, C. T. Coen, Z. E. Fleetwood, G. N. Tzintzarov, M. T. Wachter, A. Khachatrian, D. Mcmorrow, J. H. Warner, P. Paki, J. D. Cressler, "Utilizing SiGe HBT Power Detectors for Sensing Single-Event Transients in RF Circuits," IEEE Trans. Nucl. Sci., vol. 65 no. 1, pp. 239-248, 2018.
  7. Z. E. Fleetwood, A. Ildefonso, G. N. Tzintzarov, B. Wier, U. Raghunathan, M. K. Cho, I. Song, M. T. Wachter, D. Nergui, A. Khachatrian, J. H. Warner, P. McMarr, H. Hughes, E. Zhang, D. McMorrow, P. Paki, A. Joseph, V. Jain, J. D. Cressler, "SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients," IEEE Trans. Nucl. Sci., vol. 65 no. 1, pp. 399-406, 2018.
  8. A. Ildefonso, N. E. Lourenco, Z. E. Fleetwood, M. T. Wachter, G. N. Tzintzarov, A. S. Cardoso, N. J. -H. Roche, A. Khachatrian, D. McMorrow, S. P. Buchner, J. H. Warner, P. Paki, M. Kaynak, B. Tillack, J. D. Cressler, "Single-Event Transient Response of Comparator Pre-Amplifiers in a Complementary SiGe Technology," IEEE Trans. Nucl. Sci., vol. 64 no. 1, pp. 89-96, 2017, (Nominated for the Outstanding Student Paper Award at the 2016 Nuclear and Space Radiation Effects Conference).
  9. Z. E. Fleetwood, N. E. Lourenco, A. Ildefonso, J. H. Warner, M. T. Wachter, J. M. Hales, G. N. Tzintzarov, N. J. -H. Roche, A. Khachatrian, S. P. Buchner, D. McMorrow, P. Paki, J. D. Cressler, "Using TCAD Modeling to Compare Heavy-Ion and Laser-Induced Single Event Transients in SiGe HBTs," IEEE Trans. Nucl. Sci., vol. 64 no. 1, pp. 398-405, 2017.
  10. N. E. Lourenco, Z. E. Fleetwood, A. Ildefonso, M. T. Wachter, N. J. -H. Roche, A. Khachatrian, D. McMorrow, S. P. Buchner, J. H. Warner, H. Itsuji, D. Kobayashi, K. Hirose, P. Paki, A. Raman, J. D. Cressler, "The Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs," IEEE Trans. Nucl. Sci., vol. 64 no. 1, pp. 406-414, 2017, (Nominated for the Outstanding Student Paper Award at the 2016 Nuclear and Space Radiation Effects Conference).
  11. A. Omprakash, Z. Fleetwood, U. Raghunathan, A. Ildefonso, A. Cardoso, N. Lourenco, J. Babcock, R. Mukhopadhyay, E. X. Zhang, D. Fleetwood, J. Cressler, "Total Ionizing Dose Effects on a High-Voltage (>30V) Complementary SiGe on SOI Technology," IEEE Trans. Nucl. Sci., vol. 64 no. 1, pp. 277-284, 2017.
  12. A. Ildefonso, I. Song, G. N. Tzintzarov, Z. E. Fleetwood, N. E. Lourenco, M. T. Wachter, J. D. Cressler, "Modeling Single-Event Transient Propagation in a SiGe BiCMOS Direct-Conversion Receiver," IEEE Trans. Nucl. Sci., vol. 64 no. 8, pp. 2079-2088, 2017.
  13. I. Song, M. K. Cho, M. A. Oakley, A. Ildefonso, I. Ju, S. P. Buchner, D. McMorrow, P. Paki, J. D. Cressler, "On the Application of Inverse-Mode SiGe HBTs in RF Receivers for the Mitigation of Single-Event Transients," IEEE Trans. Nucl. Sci., vol. 64 no. 5, pp. 1142-1150, 2017.
  14. N. E. Lourenco, S. Zeinolabedinzadeh, A. Ildefonso, Z. E. Fleetwood, C. T. Coen, I. Song, S. Jung, F. Inanlou, N. J. -H. Roche, A. Khachatrian, D. McMorrow, S. P. Buchner, J. H. Warner, P. Paki, J. D. Cressler, "An Investigation of Single-Event Effect Modeling Techniques for a SiGe RF Low-Noise Amplifier," IEEE Trans. Nucl. Sci., vol. 63 no. 1, pp. 273-280, 2016.
  15. C. T. Coen, A. C. Ulusoy, P. Song, A. Ildefonso, M. Kaynak, B. Tillack, J. D. Cressler, "Design and On-Wafer Characterization of $G$ -Band SiGe HBT Low-Noise Amplifiers," IEEE Trans. Microw. Theory Techn., vol. 64 no. 11, pp. 3631-3642, 2016.
  16. A. S. Cardoso, A. P. Omprakash, P. S. Chakraborty, N. Karaulac, D. M. Fleischhauer, A. Ildefonso, S. Zeinolabedinzadeh, M. A. Oakley, T. G. Bantu, N. E. Lourenco, J. D. Cressler, "On the Cryogenic RF Linearity of SiGe HBTs in a Fourth-Generation 90-nm SiGe BiCMOS Technology," IEEE Trans. Electron Devices, vol. 62 no. 4, pp. 1127-1135, 2015.
  17. Z. E. Fleetwood, N. E. Lourenco, A. Ildefonso, T. D. England, I. Song, R. L. Schmid, A. S. Cardoso, S. Jung, N. J. -H. Roche, A. Khachatrian, S. P. Buchner, D. McMorrow, J. Warner, P. Paki, J. D. Cressler, "An Investigation of the SET Response of Devices and Differential Pairs in a 32-nm SOI CMOS Technology," IEEE Trans. Nucl. Sci., vol. 62 no. 6, pp. 2643-2649, 2015.

Conference Proceedings

  1. A. P. Omprakash, A. Ildefonso, G. Tzintzarov, J. Babcock, R. Mukhopadhyay, J. D. Cressler, "Using SiGe-on-SOI HBTs to Build 300$^circ$C Capable Analog Circuits," 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), pp. 206-209, 2018.
  2. A. Ildefonso, J. D. Cressler, "Radiation Hardening Strategies for SiGe-Based RF Communications Circuits and Systems," Proc. 2018 Government Microcircuit Applications and Critical Technology (GOMACTech) Conference, 2018.
  3. C. T. Coen, A. Ildefonso, Z. E. Fleetwood, J. D. Cressler, "A 19–34 GHz SiGe HBT Square-Law Detector with Ultra Low 1/f Noise for Atmospheric Radiometers," pp. 163-166, Proc. European Microwave Integrated Circuits Conference, 2017.
  4. M. T. Wachter, A. Ildefonso, Z. E. Fleetwood, N. E. Lourenco, G. Tzintzarov, D. McMorrow, N. J. -H. Roche, A. Khachatrian, P. McMarr, H. Hughes, J. H. Warner, P. Paki, J. D. Cressler, "The Effects of Total Ionizing Dose on the Transient Response of SiGe BiCMOS Technologies," 2016 Radiation Effects on Components and Systems (RADECS) Conference, 2016.
  5. A. Ildefonso, I. Song, Z. E. Fleetwood, N. E. Lourenco, M. T. Wachter, J. D. Cressler, "Modeling Single-Event Transient Propagation in a SiGe BiCMOS Direct-Conversion Receiver," Radiation Effects on Components and Systems (RADECS) Conference, 2016.
  6. A. P. Omprakash, P. S. Chakraborty, H. Ying, A. S. Cardoso, A. Ildefonso, J. D. Cressler, "On the potential of using SiGe HBTs on SOI to support emerging applications up to 300$^circ$C," Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 2015 IEEE, pp. 27-30, 2015.
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